Lifetime degradation of n-type Czochralski silicon after hydrogenation

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Lifetime spectroscopy and hydrogenation of chromium in n- and p- type Cz silicon

The defect parameters of isolated Cri and chromium-boron (CrB) pairs are reassessed by conducting lifetime spectroscopy on both nand p-type, Cr-doped silicon samples with different doping levels, and fitting the lifetimes with the Shockley-Read-Hall (SRH) model. The uncertainty ranges of the parameters are significantly tightened through a combined analysis of the two defects with the lifetime ...

Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence

Photoluminescence (PL) images and micro-PL maps were taken on nand p-type, Cuand Ni-doped monocrystalline silicon wafers, in which the Ni and Cu had precipitated during ingot growth. Markedly different distributions of the precipitates were observed in the nand p-type samples: in the n-type Cu-doped samples, a particle-lean ring structure was observed, dividing the sample into a central region ...

Simulation of 20.96% efficiency n-type Czochralski UMG silicon solar cell

In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosp...

Charge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreeme...